Semiconductors

An n.p.n transistor with current gain $\beta\,=100$in common emitter configuration is shown in figure. The output voltage of the amplifier will be

Identify the operation performed by the circuit given below :

For the logic circuit shown, the output waveform at $Y$ is

As per the given circuit, the value of current through the battery will be _____ A.

A zener diode having zener voltage $8V$ and power dissipation rating of $0.5W$ is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of…

From the given transfer characteristic of a transistorin $\mathrm{CE}$ configuration, the value of power gain of this configuration is $10^{x}$, for$R_{B}=10\mathrm{k\Omega}$, and$R_{C}=1\mathrm{k\Omega}$. The value…

In the given circuit, the voltage across load resistance $(R_{L})$ is:

Given,$A$and$B$are input terminals Logic $1$is$>5V$ Logic$0$is$Which logic gate operation, the following circuit does? Note: This question was awarded abonus.$C$ option changed.$

If the potential barrier across a $p-n$junction is $0.6V$. Then the electric field intensity, in the depletion region having the width of $6\times\,10^{-6}m$, will be _____$\times\,10^{5}NC^{-1}$

The typical output characteristics curve for a transistor working in the common-emitter configuration is shown in the figure. The estimated current gain from the figure is

The output from a NAND gate having inputs A and B given below will be,

A potential barrier of $0.4V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0\times\,10^{5}ms^{-1}$. The speed with which electron enters the $p$ side will be…