Semiconductors

The waveforms $A$ and $B$ given below are given as input to a NAND gate. Then its logic output $Y$ is

In an $n-p-n$ transistor (in common emitter mode) $10^{10}$ electrons enter the emitter in $10^{-}$ ${ }^6$ s. Only $2 \%$ of the electrons are lost in the base. Calculate the current amplification factor. (Charge on…

If voltage across zener diode is $6 \mathrm{~V}$, then find out the value of maximum resistance in this condition.

Assertion : The logic gate NOT can be built using diode. Reason : The output voltage and input voltage of the diode have $180^{\circ}$ phase difference.

Assertion : Electron has higher mobility than hole in a semiconductor. Reason : Mass of electron is less than the mass of hole.

Assertion : Photodiode and solar cell work on the same principle. Reason : Area is large for solar cell.

Assertion : Gallium arsenide phosphide is used for making LED. Reason: Valanceband overlaps with conduction band in case of semionductor.

Assertion : In a common emitter amplifier, the load resistance of the output circuit is 1000 times the resistance of the input circuit. If $\alpha=$ 0.98 , then voltage gain is $49 \times 10^3$. Reason :…

Assume that each diode shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the resistance $150 \Omega$ is

If current in diode is five times that in $R_1$. Breadkdown voltage of diode is 6 volt. Find the value of $R$.

In a common emitter (CE) amplifier having a voltage gain $A_v$, the transistor used has transconductance 0.03 mho and current gain 25. If this transistor is replaced with another one with transconductance $0.02…

Assertion : An $n$-type semiconductor has a large number of electrons but still it is electrically neutral. Reason: An $n$-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.